N-Channel MOSFET - LZG
Description
IRFS634(CS634F)
N-Channel MOSFET/N MOS
: DC/DC 。
Purpose: These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
: ,,。
Features: Low gate charge, low crss, fast switching.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VDSS 250 V
ID(Tc=25℃)
8.
1 A
ID(Tc=100℃)
5.
1 A
IDM
32.
4
A
VGSS
±30
V
EAS 200 mJ
EAR 7.
4 mJ
IAR 8.
1 A
PD(Tc=25℃)
38 W
TJ,TSTG
-55 to 150 ℃
/Electrical Characteristics(Ta=25℃)
Symbol
Test Conditions
BVDSS
VGS=0V
ID=250μA
IDSS
VDS=250V VDS=200V
VGS=0V TC=125℃
IGSS VGS=±30V VDS=0V
VGS(th)
VDS=VGS
ID=250μA
RDS(on)
VGS=10V
ID=4.
05A
gFS
VDS=40V
ID=4.
05A
VSD
VGS=0V
IS=8.
1A
Ciss
Coss VDS=25V VGS=0V f=1.
0MHz
Crss
td(on)
tr td(off)
VDD=125V ID=8.
1A RG=25Ω
tf
...
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