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FDP10N50F

Fairchild Semiconductor
Part Number FDP10N50F
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.85Ω Features • RDS(on) = ...
Datasheet PDF File FDP10N50F PDF File

FDP10N50F
FDP10N50F

Overview
FDP10N50F / FDPF10N50FT N-Channel MOSFET FDP10N50F / FDPF10N50FT N-Channel MOSFET 500V, 9A, 0.
85Ω Features • RDS(on) = 0.
71Ω ( Typ.
) @ VGS = 10V, ID = 4.
5A • Low Gate Charge ( Typ.
18nC) • Low Crss ( Typ.
10pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant January 2009 UniFETTM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited ...


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