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FDB047N10

Fairchild Semiconductor
Part Number FDB047N10
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDB047N10 — N-Channel PowerTrench® MOSFET FDB047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.7 mΩ November 2013 ...
Datasheet PDF File FDB047N10 PDF File

FDB047N10
FDB047N10

Overview
FDB047N10 — N-Channel PowerTrench® MOSFET FDB047N10 N-Channel PowerTrench® MOSFET 100 V, 164 A, 4.
7 mΩ November 2013 Features • RDS(on) = 3.
9 mΩ (Typ.
) @ VGS = 10 V, ID = 75 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • Motor Drives and Uninterruptible P...


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