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FDY1002PZ

Fairchild Semiconductor
Part Number FDY1002PZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench® MOSFET FDY1002PZ Dual P-Channel (–1.5 V) Specified PowerTrench...
Datasheet PDF File FDY1002PZ PDF File

FDY1002PZ
FDY1002PZ

Overview
FDY1002PZ Dual P-Channel (–1.
5 V) Specified PowerTrench® MOSFET FDY1002PZ Dual P-Channel (–1.
5 V) Specified PowerTrench® MOSFET October 2008 –20 V, –0.
83 A, 0.
5 Ω Features General Description „ Max rDS(on) = 0.
5 Ω at VGS = –4.
5 V, ID = –0.
83 A „ Max rDS(on) = 0.
7 Ω at VGS = –2.
5 V, ID = –0.
70 A „ Max rDS(on) = 1.
2 Ω at VGS = –1.
8 V, ID = –0.
43 A „ Max rDS(on) = 1.
8 Ω at VGS = –1.
5 V, ID = –0.
36 A „ HBM ESD protection level = 1400 V (Note 3) „ RoHS Compliant This Dual P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the rDS(on)@VGS = –1.
5 V.
Application „ Li-Ion Battery Pack 6 5 4 1 2 3 SC89-6 S1 1 G1 2 D2 3 6 D1 5 G2 4 S...


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