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FDT86102LZ

Fairchild Semiconductor
Part Number FDT86102LZ
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.6 A, 28 mΩ Fe...
Datasheet PDF File FDT86102LZ PDF File

FDT86102LZ
FDT86102LZ

Overview
FDT86102LZ N-Channel PowerTrench® MOSFET November 2010 FDT86102LZ N-Channel PowerTrench® MOSFET 100 V, 6.
6 A, 28 mΩ Features „ Max rDS(on) = 28 mΩ at VGS = 10 V, ID = 6.
6 A „ Max rDS(on) = 38 mΩ at VGS = 4.
5 V, ID = 5.
5 A „ HBM ESD protection level > 6 kV typical (Note 4) „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.
G-S zener has been added to enhance ESD voltage level.
Applications „ DC-DC conversion „ Inverte...


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