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FDS86252

Fairchild Semiconductor
Part Number FDS86252
Manufacturer Fairchild Semiconductor
Description MOSFET
Published Jan 11, 2017
Detailed Description FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.5 A, 55 mΩ Featur...
Datasheet PDF File FDS86252 PDF File

FDS86252
FDS86252

Overview
FDS86252 N-Channel Power Trench® MOSFET April 2011 FDS86252 N-Channel Power Trench® MOSFET 150 V, 4.
5 A, 55 mΩ Features General Description „ Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.
5 A „ Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.
7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
Application „ DC-DC Conversion D D D D SO-8 Pin 1 G S S...


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