DUAL TRANSISTOR - JCET
Description
JC(T
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD
SOT-353 Plastic-Encapsulate Transistors
2SA1873 DUAL TRANSISTOR (PNP+PNP)
Features z Small package (dual type) z High voltage and high current z High hFE z Excellent hFE linearity z Complementary to 2SC4944
MARKING: SY SGR
SOT-353
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO
VEBO IC PC TJ Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage
Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value -50 -50
-5 -150 200 150 -55 to150
Units V V
V mA mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO...
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