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STGW10M65DF2

Part Number	STGW10M65DF2
Manufacturer	STMicroelectronics
Description	IGBT
Published	Jan 7, 2017
Detailed Description	STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figu...
Datasheet	STGW10M65DF2 PDF File

Overview

STGW10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low loss Datasheet - production data 3 2 1 TO-247 Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.
55 V (typ.
) @ IC = 10 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capabi...

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STGW10M65DF2 IGBT - STMicroelectronics

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