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STGD6M65DF2

STMicroelectronics
Part Number STGD6M65DF2
Manufacturer STMicroelectronics (https://www.st.com/)
Title IGBT
Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The...
Features • Maximum junction temperature: TJ = 175 °C • 6 μs of minimum short-circuit withstand time • VCE(sat) = 1.55 V (typ....
Published Jan 7, 2017
Datasheet PDF File STGD6M65DF2 PDF File


STGD6M65DF2
STGD6M65DF2


Features

• Maximum junction temperature: TJ = 175 °C
• 6 μs of minimum short-circuit withstand time
• VCE(sat) = 1.55 V (typ.) @ IC = 6 A
• Tight parameter distribution
• Safer paralleling
• Positive VCE(sat) temperature coefficient
• Low thermal res...



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