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HY57V28820HCT

Part Number	HY57V28820HCT
Manufacturer	Hynix Semiconductor
Description	4Banks x 4M x 8bits Synchronous DRAM
Published	Jan 5, 2017
Detailed Description	HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM 0.1 : Hynix Change 0.2 : Burst read single write mode correction ...
Datasheet	HY57V28820HCT PDF File

Overview

HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM 0.
1 : Hynix Change 0.
2 : Burst read single write mode correction Rev.
0.
2 / Aug.
2001 1 HY57V28820HC(L)T 4Banks x 4M x 8bits Synchronous DRAM DESCRIPTION The Hynix HY57V28820HC(L)T is a 134,217,728bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth.
HY57V28820HC(L)T is organized as 4banks of 4,194,304x8.
HY57V28820HC(L)T is offering fully synchronous operation referenced to a positive edge of the clock.
All inputs and outputs are synchronized with the rising edge of the clock input.
The data paths are internally pipelined to achieve very high bandwidth.
All ...

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