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PTU2N60

PHILOP
Part Number PTU2N60
Manufacturer PHILOP
Description 600V N-Channel MOSFET
Published Jan 5, 2017
Detailed Description PTD2N60/PTU2N60 600V N-Channel MOSFET Features • 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V • Low gate charge ( typical 9nC...
Datasheet PDF File PTU2N60 PDF File

PTU2N60
PTU2N60

Overview
PTD2N60/PTU2N60 600V N-Channel MOSFET Features • 1.
9A, 600V, RDS(on) = 4.
70Ω @VGS = 10 V • Low gate charge ( typical 9nC) • High ruggedness • Fast switching • 100% avalanche tested • Improved dv/dt capability General Description This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology.
PTD2N60 (TO-252) PTU2N60 (TO-251) Absolute ...


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