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RSS050P03

Rohm
Part Number RSS050P03
Manufacturer Rohm
Description Transistors
Published Jan 4, 2017
Detailed Description Transistors 4V Drive Pch MOS FET RSS050P03 RSS050P03 zStructure Silicon P-channel MOS FET zFeatures 1) Low On-resistan...
Datasheet PDF File RSS050P03 PDF File

RSS050P03
RSS050P03


Overview
Transistors 4V Drive Pch MOS FET RSS050P03 RSS050P03 zStructure Silicon P-channel MOS FET zFeatures 1) Low On-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication Power switching, DC / DC converter.
zExternal dimensions (Unit : mm) SOP8 5.
0 0.
4 1.
75 (8) (5) 3.
9 6.
0 0.
4Min.
1pin mark (1) 1.
27 (4) 0.
2 Each lead has same dimensions zPackaging specifications Package Type Code Basic ordering unit (pieces) RSS050P03 Taping TB 2500 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −30 ±20 ±5.
0 ±20 −1.
6 −20 2.
0 150 −55 to +150 zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board.
Symbol Rth (ch-a) ∗ Limits 62.
5 zEquivalent circuit (8) (7) (6) (5) ∗2 ∗1 (1) (2) (3) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (4) (1) Source (2) Source (3) Source (4) Gate (5) Drain (6 )Drain (7) Drain (8) Drain Unit V V A A A A W °C °C Unit °C / W Rev.
B 1/4 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Max.
Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS= −20V, VDS=0V Drain-source breakdown voltage V(BR) DSS −30 − − V ID= −1mA, VGS=0V Zero gate voltage drain current IDSS − − −1 µA VDS= −30V, VGS=0V Gate threshold voltage VGS (th) −1.
0 − −2.
5 V VDS= −10V, ID= −1mA Static drain-source on-state resistance RDS (on)∗ − − − 30 42 mΩ ID= −5.
0A, VGS= −10V 47 65 mΩ ID= −2.
5A, VGS= −4.
5V 55 77 mΩ ID= −2.
5A, VGS= −4.
0V Forward transfer admittance Yfs ∗ 5.
0 − − S VDS= −10V, ID= −2.
5A Input capacitance Ciss − 1200 − pF VDS= −10V Output capacitance Coss − 250 − pF VGS=0V Reverse transfer capacitance Turn-on delay time Rise time Turn-off...


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