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RJP30H2A

Renesas
Part Number RJP30H2A
Manufacturer Renesas
Description Silicon N-Channel IGBT
Published Jan 3, 2017
Detailed Description Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.2...
Datasheet PDF File RJP30H2A PDF File

RJP30H2A
RJP30H2A

Overview
Preliminary Datasheet RJP30H2DPK-M0 / RJP30H2A Silicon N Channel IGBT High speed power switching R07DS0467EJ0200 Rev.
2.
00 Jun 15, 2011 Features  Trench gate and thin wafer technology (G6H-II series)  Low collector to emitter saturation voltage: VCE(sat) = 1.
4 V typ  High speed switching: tf = 100 ns typ, tf = 180 ns typ  Low leak current: ICES = 1 A max Outline RENESAS Package code: PRSS0004ZH-A (Package name: TO-3PSG) 4 C 1 23 1.
Gate 2.
Collector G 3.
Emitter 4.
Collector (Flange) E Absolute Maximum Ratings Item Collector to Emitter voltage Gate to Emitter voltage Collector current Collector peak current Collector dissipation Junction to case thermal impedance Junction temper...


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