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CJU18P10

JCET
Part Number CJU18P10
Manufacturer JCET
Description P-Channel Power MOSFET
Published Jan 3, 2017
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU18P10 P-Channel Power MOSFE...
Datasheet PDF File CJU18P10 PDF File

CJU18P10
CJU18P10

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU18P10 P-Channel Power MOSFET V(BR)DSS -100V RDS(on)MAX  100mΩ@-10V ID -18A   TO-252-2L GENERAL DESCRIPTION The CJU18P10 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
It can be used in a wide variety of applications.
It is ESD protested.
1.
GATE 2.
DRAIN 3.
SOURCE FEATURE  VDS =-100V,ID =-18A RDS(on) <100mΩ @ VGS=-10V (Typ:85mΩ)  ESD Protection  Advanced trench process technology  Reliable and rugged  High density cell design for ultra low On-Resistance APPLICATION  Power management in notebook computer  Portable equipment and battery pow...


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