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2SC5906

Part Number	2SC5906
Manufacturer	Toshiba
Description	Silicon NPN Transistor
Published	Dec 30, 2016
Detailed Description	TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet	2SC5906 PDF File

Overview

TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5906 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5906 Unit: mm • High DC current gain: hFE = 200 to 500 (IC = 0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
2 V (max) • High-speed switching: tf = 25 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO VCEX VCEO VEBO IC ICP IB PC (Note 1) Tj Tstg 50 50 30 7 4 7 0.
...

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