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STN8205D

Stanson
Part Number STN8205D
Manufacturer Stanson
Description Dual N Channel Enhancement Mode MOSFET
Published Dec 29, 2016
Detailed Description STN8205D Dual N Channel Enhancement Mode MOSFET 5.0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power f...
Datasheet PDF File STN8205D PDF File

STN8205D
STN8205D

Overview
STN8205D Dual N Channel Enhancement Mode MOSFET 5.
0A DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6 G1 D G2 STN8205 SYA FEATURE z 20V/4.
0A, R =DS(ON) 30m-ohm@VGS =4.
5V z 20V/3.
4A, RDS(ON) =42m-ohm@VGS =2.
5V z Super high density cell design for extremely low RDS(ON) z Exceptional low on-resistanc...


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