SILICON NPN TRANSISTOR - LZG
Description
MJE13003F6(3DD13003F6)
NPN /SILICON NPN TRANSISTOR
:、、。
Purpose: High frequency electronic lighting ballast applications，converters, inverters,
switching regulators, etc.
/Absolute maximum ratings(Ta=25℃)
Symbol
Rating
Unit
VCBO 600 V
VCEO 400 V
VEBO 9.
0 V
IC 0.
5 A
PC(Ta=25℃)
1.
25
W
PC(TC=25℃)
20 W
Tj 150 ℃
Tstg -55～150 ℃
/Electrical characteristics(Ta=25℃)
Symbol
Test condition
VCBO VCEO VEBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT tf tS
IC=1mA IC=10mA IE=1mA VCB=600V VCE=400V VEB=9.
0V VCE=5.
0V IC=200mA IC=200mA VCE=10V IC=50mA
VCE=5V (UI9600)
IE=0 IB=0 IC=0 IE=0 IB=0 IC=0 IC=200mA IB=40mA IB=40mA f=1.
0MHz
IC=100mA
Min
600 400 9.
0
10
5.
0
Rating
Typ
Max
0.
1 0.
1 0.
1 40 0.
5 1.
2
0.
6 4.
0
Unit
V V V mA mA mA
V V MHz ...
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