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IRFR3710ZPbF

Infineon
Part Number IRFR3710ZPbF
Manufacturer Infineon
Description Power MOSFET
Published Dec 21, 2016
Detailed Description   Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repe...
Datasheet PDF File IRFR3710ZPbF PDF File

IRFR3710ZPbF
IRFR3710ZPbF

Overview
  Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Multiple Package Options  Lead-Free IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET® Power MOSFET   VDSS 100V RDS(on) 18m ID 42A D D Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient and reliable device for use in a wide variety o...


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