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IRF1407LPbF

Infineon
Part Number IRF1407LPbF
Manufacturer Infineon
Description Power MOSFET
Published Dec 21, 2016
Detailed Description IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C...
Datasheet PDF File IRF1407LPbF PDF File

IRF1407LPbF
IRF1407LPbF

Overview
IRF1407SPbF IRF1407LPbF Benefits  Advanced Process Technology  Ultra Low On-Resistance  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die size...


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