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CJP85N80

JCET
Part Number CJP85N80
Manufacturer JCET
Description N-Channel Power MOSFET
Published Dec 21, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOS...
Datasheet PDF File CJP85N80 PDF File

CJP85N80
CJP85N80

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP85N80 N-Channel Power MOSFET V(BR)DSS 85V RDS(on)MAX   8.
5mΩ@10V ID 80A DESCRIPTION The CJP85N80 uses advanced trench technology and design to provide excellent RDS(on) with low gate charge.
Good stability and uniformity with high EAS .
This device is suitable for use in PWM, load switching and general purpose applications.
TO-220-3L-C 1.
GATE 2.
DRAIN FEATURE  Advanced trench process technology  Special designed for convertors and power controls  High density cell design for ultra low RDS(on)  Fully characterized avalanche voltage and current  Fast switching  Good stability and uniform...


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