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CJP80N03

JCET
Part Number CJP80N03
Manufacturer JCET
Description N-Channel Power MOSFET
Published Dec 21, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N03 V(BR)DSS 30V N-Ch...
Datasheet PDF File CJP80N03 PDF File

CJP80N03
CJP80N03

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-220-3L-C Plastic-Encapsulate MOSFETS CJP80N03 V(BR)DSS 30V N-Channel Power MOSFET RDS(on)MAX 6.
5mΩ@10V 10mΩ@ 5V     ID 80A TO-220-3L-C DESCRIPTION The CJP80N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
FEATURES 1.
GATE 2.
DRAIN 3.
SOURCE 123 z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Excellent package for good heat dissipation z Special process technology for high ESD capability z Good stability and uniformity with high EAS APPLICATIONS z Power switching application...


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