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CJM1206

Part Number	CJM1206
Manufacturer	JCET
Description	P-Channel Power MOSFET
Published	Dec 21, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MO...
Datasheet	CJM1206 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS CJM1206 P-Channel Power MOSFET DFNWB2*2-6L-J V(BR)DSS -12V RDS(on)MAX 45 mΩ@-4.
5V 60 mΩ@-2.
5V 90 mΩ@-1.
8V ID -6A 1.
DRAIN 2.
DRAIN 3.
GATE 4.
SOURCE 5.
DRAIN 6.
DRAIN DESCRIPTION The CJM1206 uses advanced trench technology to provide excellent RDS(on) , low gate charge and operation with low gate voltage.
.
This device is suitable for use as a load switching application and a wide variety of other applications.
FEATURES  Advanced trench MOSFET process technology  Ultra low on-resistance with low gate charge 0$5.
,1* APPLICATIONS  PWM application  Load switch  Battery charge in cel...

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