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CJD30N10

JCET
Part Number CJD30N10
Manufacturer JCET
Description N-Channel Power MOSFET
Published Dec 21, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-256 Plastic-Encapsulate MOSFETS CJ'30N10 N-Channel Power MOSFET...
Datasheet PDF File CJD30N10 PDF File

CJD30N10
CJD30N10

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-256 Plastic-Encapsulate MOSFETS CJ'30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   31mΩ@10V ID 30 A DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
TO-256 1.
GATE 2.
DRAIN 1 23 3.
SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURES  High density cell design for ultra low RDS(on)  Special process technology for high ESD capability  Fully characteriz...


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