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CJD05N60B

Part Number	CJD05N60B
Manufacturer	JCET
Description	N-Channel MOSFET
Published	Dec 19, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B V(BR)DSS 600V N-Chann...
Datasheet	CJD05N60B PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251S Plastic-Encapsulate MOSFETS CJD05N60B V(BR)DSS 600V N-Channel Power MOSFET RDS(on)MAX 2.
5Ω@10V ID 5A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
TO-251S 1.
GATE 2.
DRAIN 3.
SOURCE 1 23 FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanch...

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