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CJD04N65

Part Number	CJD04N65
Manufacturer	JCET
Description	N-Channel MOSFET
Published	Dec 19, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 V(BR)DSS 650V N-Channe...
Datasheet	CJD04N65 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251S Plastic-Encapsulate MOSFETS CJD04N65 V(BR)DSS 650V N-Channel Power MOSFET RDS(on)MAX 3.
0Ω@10V ID 4A GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode fast recovery time.
Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified TO-251S 1.
GATE 2.
DRAIN ...

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