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CJD04N60B

ZPSEMI
Part Number CJD04N60B
Manufacturer ZPSEMI
Description N-Channel Power MOSFET
Published Dec 19, 2016
Detailed Description CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced h...
Datasheet PDF File CJD04N60B PDF File

CJD04N60B
CJD04N60B

Overview
CJD04N60B TO-251S Plastic-Encapsulate MOSFETS CJD04N60B 600V N-Channel Power MOSFET General Description This advanced high voltage MOSFET is designed to wighstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode wigh fast recovery time.
Desighed for high voltage,high speed switching applications such as power supplies,converters,power motor controls and bridge circuits.
TO-251S 1.
GATE 2.
DRAIN 3.
SOURCE FEATURE z High Current Rating z Lower Rds(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Drain-So...


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