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V(BR)DSS
RDS(on)MAX
ID
9
Pȍ #9
$
'(6&5,37,21
The CJ%85N80 uses advanced trench technology and design to
provide excellent RDS(on) with low gate charge. Good stability and
uniformity with high EAS . This device is suitable for use in PWM,
load switching and general purpose applications.
TO-2-L
1. GATE 2. DRAIN 3. SOURCE
)($785( z Advanced trench process technology z Special designed for convertors and power controls z High density cell design for ultra low RDS(on) z Fully characterized avalanche voltage and current z ...