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K2016

Part Number	K2016
Manufacturer	Panasonic
Description	Silicon N-Channel Power F-MOS
Published	Dec 12, 2016
Detailed Description	Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.315Ω(typ) ...
Datasheet	K2016 PDF File

Overview

Power F-MOS FETs 2SK2016 Silicon N-Channel Power F-MOS s Features q Low ON-resistance RDS(on) : RDS(on)1= 0.
315Ω(typ) q High-speed switching : tf= 38ns(typ) q No secondary breakdown q For low-voltage drive(VGS= 4V) q Taping supply possible s Applications q DC-DC converter q Non-contact relay q Solenoid drive q Motor drive s Absolute Maximum Ratings (Tc = 25˚C) Parameter Drain-Source breakdown voltage Gate-Source voltage at 4V drive Drain current DC Pulse Allowable power dissipation TC= 25˚C Ta=25˚C Channel temperature Storage temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 100 ±20 ±3 ±5 ±10 10 0.
75 150 –55 to +150 Unit V V A A W ˚C ˚C s Electrical Characteristics (T...

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