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MJD127

Part Number	MJD127
Manufacturer	JCET
Description	PNP Transistor
Published	Dec 11, 2016
Detailed Description	JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FE...
Datasheet	MJD127 PDF File

Overview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD TO-251-3L Plastic-Encapsulate Transistors MJD127 TRANSISTOR (PNP) FEATURES High DC Current Gain Electrically Similar to Popular TIP127 Built-in a Damper Diode at E-C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -100 -100 -5 -8 1.
5 150 -55-150 Unit V V V A W ℃ ℃ TO-251-3L 1.
BASE 2.
COLLECTOR 3.
EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Collector-bas...

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