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BT15N60A9F

Huajing Microelectronics
Part Number BT15N60A9F
Manufacturer Huajing Microelectronics
Description Silicon FS Planar IGBT
Published Dec 6, 2016
Detailed Description Silicon FS Planar IGBT BT15N60A9F ○R General Description： Using HUAJING's proprietary Planar design and advanced FS te...
Datasheet PDF File BT15N60A9F PDF File

BT15N60A9F
BT15N60A9F

Overview
Silicon FS Planar IGBT BT15N60A9F ○R General Description： Using HUAJING's proprietary Planar design and advanced FS technology, the 600V FSIGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
VCES IC Ptot TC=25℃） VCE(SAT) 600 15 25 2.
1 V A W V Features： l FS Planar Technology, Positive temperature coefficient l Low saturation voltage: VCE(sat), typ = 2.
1V @ IC = 15A and TC = 25°C l Extremely enhanced avalanche capability Applications： Aircondition、Welding、UPS… Absolute Maximum Ratings （Tc= 25℃ unless otherwise specified）： Symbol Parameter VCES Collector-Emitter Voltage VGES Gate- Emitter Voltage Collector Current I...


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