DatasheetsPDF.com

CS830A4RD

Part Number	CS830A4RD
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs...
Datasheet	CS830A4RD PDF File

Overview

Silicon N-Channel Power MOSFET CS830 A4RD ○R General Description： CS830 A4RD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 500 5 75 1.
25 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-252, which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data:14.
5nC) l Low Reverse transfer capacitances(Typical:7.
5pF) l 100% Single Pulse avalanche energy Test Applications： P...

Similar Datasheet

CS830A4RD Silicon N-Channel Power MOSFET - Huajing Microelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)