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CS1N80A3H

Huajing Microelectronics
Part Number CS1N80A3H
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS1N80 A3H ○R General Description: CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs...
Datasheet PDF File CS1N80A3H PDF File

CS1N80A3H
CS1N80A3H


Overview
Silicon N-Channel Power MOSFET CS1N80 A3H ○R General Description: CS1N80 A3H, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD (TC=25℃) RDS(ON)Typ 800 1 30 12 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features: l Fast Switching l Low ON Resistance(Rdson≤15Ω) l Low Gate Charge (Typical Data:6.
7nC) l Low Reverse transfer capacitances(Typical:2.
6pF) l 100% Single Pulse avalanche energy Test Applications:...



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