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CS9N90ANHD

Part Number	CS9N90ANHD
Manufacturer	Huajing Microelectronics
Description	Silicon N-Channel Power MOSFET
Published	Dec 6, 2016
Detailed Description	Silicon N-Channel Power MOSFET CS9N90 ANHD ○R General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFE...
Datasheet	CS9N90ANHD PDF File

Overview

Silicon N-Channel Power MOSFET CS9N90 ANHD ○R General Description： CS9N90 ANHD, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching VDSS ID PD(TC=25℃) RDS(ON)Typ 900 9 150 0.
95 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-3P(N), which accords with the RoHS standard.
Features： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65nC) l Low Reverse transfer capacitances(Typical: 13pF) l 100% Single Pulse avalanche energy Test Applications...

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CS9N90ANHD Silicon N-Channel Power MOSFET - Huajing Microelectronics

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