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CS2N70A3R1-G

Huajing Microelectronics
Part Number CS2N70A3R1-G
Manufacturer Huajing Microelectronics
Description Silicon N-Channel Power MOSFET
Published Dec 6, 2016
Detailed Description Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channe...
Datasheet PDF File CS2N70A3R1-G PDF File

CS2N70A3R1-G
CS2N70A3R1-G

Overview
Silicon N-Channel Power MOSFET CS2N70 A3R1-G ○R General Description： VDSS 700 V CS2N70 A3R1-G, the silicon N-channel Enhanced ID 2A VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 35 W which reduce the conduction loss, improve switching RDS(ON)Typ 4.
7 Ω performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-251, which accords with the RoHS standard.
Features： l Fast Switching l Low ON Resistance(Rdson≤6.
5Ω) l Low Gate Charge (Typical Data:8.
5nC) l Low Reverse transfer capacitances(Typical:3.
8pF) l 100% Single Pulse avalanche ene...


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