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BSC0911ND

Part Number	BSC0911ND
Manufacturer	Infineon
Description	Dual N-Channel OptiMOS MOSFET
Published	Dec 5, 2016
Detailed Description	Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performa...
Datasheet	BSC0911ND PDF File

Overview

Dual N-Channel OptiMOS™ MOSFET Features Product Summary • Dual N-channel OptiMOS™ MOSFET • Optimized for high performance Buck converter • Logic level (4.
5V rated) VDS RDS(on),max • N-channel ID • Qualified according to JEDEC1) for target applications VGS=10 V VGS=4.
5 V • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 VPhase BSC0911ND Q1 Q2 25 25 V 3.
2 1.
2 mW 4.
8 1.
7 40 40 A Type BSC0911ND Package PG-TISON-8 Marking 0911ND Maximum ratings, at T j=25 °C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current Pulsed drain current5) Avalanche energy, single pulse Gate source voltage Power dissipation ID I D,pulse E AS V...

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BSC0911ND Dual N-Channel OptiMOS MOSFET - Infineon

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