| Part Number | HFF5N60 |
| Manufacturer | HUASHAN ELECTRONIC |
| Title | N-Channel Enhancement Mode Field Effect Transistor |
| Description | These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced ... |
| Features |
• 4.5A, 600V(See Note), RDS(on) <2.5Ω@VGS = 10 V • Fast switching • 100% avalanche tested • Improved dv/dt capability • Equivalent Type: FQPF5N60C █ Maximum Ratings（Ta=25℃ unless otherwise specified） TO-220F 1 1- G 2-D 3-S Tstg——Storage Temperature... |
| Published | Dec 1, 2016 |
| Datasheet |
 HFF5N60 PDF File
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