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AUIRF7343Q

Infineon
Part Number AUIRF7343Q
Manufacturer Infineon
Description Dual N/P-Channel MOSFET
Published Dec 1, 2016
Detailed Description   AUTOMOTIVE GRADE AUIRF7343Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Driv...
Datasheet PDF File AUIRF7343Q PDF File

AUIRF7343Q
AUIRF7343Q


Overview
  AUTOMOTIVE GRADE AUIRF7343Q Features  Advanced Planar Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dual N and P Channel MOSFET  Surface Mount  Available in Tape & Reel  150°C Operating Temperature  Lead-Free, RoHS Compliant  Automotive Qualified *   N-CHANNEL MOSFET N-CH P-CH S1 1 G1 2 8 D1 7 D1 VDSS 55V -55V S2 3 6 D2 RDS(on) typ.
0.
043 0.
095 G2 4 5 D2 max.
0.
050 0.
105 P-CHANNEL MOSFET ID 4.
7A -3.
4A Top View Description Specifically designed for Automotive applications, these HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area.
Additional features of these Automotive qualified HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.
These benefits combine to make this design an extremely efficient and reliable device for use in Auto...


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