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PXAC241702FC

Part Number	PXAC241702FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz Description The PXAC241702FC is a...
Datasheet	PXAC241702FC PDF File

Overview

... 28 V LDMOS FET with an asymm etrical design intended for use in multi-standard cellular power amplifier applications in the 2300 to 2400 MHz frequency band.
Features include dual-path design, high gain and thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC241702FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ = 360 mA, ƒ = 2300 MHz 3GPP WCDMA signal, 10 dB PAR, 3.
84 MHz BW 24 Efficiency 20 16 Gain 75 50 25 12 0 8 PAR @ 0.
01% CCDF 4 -25 -50 0 -75c241702fc-gr1a 25 30 35 40 45 50 55 Features...

Similar Datasheet

PXAC241702FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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