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PXAC201202FC

Part Number	PXAC201202FC
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a...
Datasheet	PXAC201202FC PDF File

Overview

PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz Description The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band.
Its asymmetric and dual-path design make it ideal for Doherty amplifier designs.
It features input and output matching, and a thermally-enhanced package with earless flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PXAC201202FC Package H-37248-4 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 28 V, IDQ = 240 mA, ƒ = 1805 MHz 3.
84 MHz ...

Similar Datasheet

PXAC201202FC Thermally-Enhanced High Power RF LDMOS FET - Infineon

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