DatasheetsPDF.com

PTVA104501EH

Part Number	PTVA104501EH
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS...
Datasheet	PTVA104501EH PDF File

Overview

PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET 450 W, 50 V, 960 – 1215 MHz Description The PTVA104501EH LDMOS FET is designed for use in power amplifier applications in the 960 to 1215 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA104501EH Package H-33288-2 POUT (dBm) Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 200 mA, TCASE = 25°C, 128 µs pulse width, 10% duty cycle 65 Output power Efficiency 55 65 55 45 45 35 960 MHz 35 1030 Mhz 25 1090 MHz 25 1150 MHz 1215 MHz 15 a10...

Similar Datasheet

PTVA104501EH Thermally-Enhanced High Power RF LDMOS FET - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)