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PTVA035002EV

Part Number	PTVA035002EV
Manufacturer	Infineon
Description	Thermally-Enhanced High Power RF LDMOS FET
Published	Nov 27, 2016
Detailed Description	PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS ...
Datasheet	PTVA035002EV PDF File

Overview

...FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band.
Features include high gain and thermally-enhanced package with bolt-down flange.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA035002EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Pulsed CW Performance 450 MHz, VD = 50 V, IDQ = 0.
5 A, 12 µsec pulse width, 10% duty cycle 22 85 20 Gain 18 75 65 16 55 14 Efficiency 12 45 35 10 48 a035002 gr 1 25 50 52 54 56 58 60 Output Power (dBm) Features • Unmatched input and output • High gain and efficiency • Integrated ESD protection • Human Body Mo...

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PTVA035002EV Thermally-Enhanced High Power RF LDMOS FET - Infineon

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