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PTFC260202FC

Infineon
Part Number PTFC260202FC
Manufacturer Infineon
Description Thermally-Enhanced High Power RF LDMOS FET
Published Nov 27, 2016
Detailed Description PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integ...
Datasheet PDF File PTFC260202FC PDF File

PTFC260202FC
PTFC260202FC

Overview
...rates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2495 to 2690 MHz frequency band.
Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTFC260202FC Package H-37248-4 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP Drive-up VDD = 28 V, IDQ = 0.
17 A, ƒ = 2620 MHz, 3GPP WCDMA, PAR = 8 dB, 10 MHz carrier spacing, BW 3.
84 MHz 20 50 19 Gain 18 40 30 17 Efficiency 20 16 10 15 0 30 31 32 33 34 35 36 37 38 39 40 Output Power (dBm) Features • Broadband input matching • Typical CW performance, 2620 MHz, 28 V - Output power at P1dB = 25 W - Efficiency...


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