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PTFB192503EL

Infineon Technologies
Part Number PTFB192503EL
Manufacturer Infineon Technologies
Description Thermally-Enhanced High Power RF LDMOS FETs
Published Nov 27, 2016
Detailed Description PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB1925...
Datasheet PDF File PTFB192503EL PDF File

PTFB192503EL
PTFB192503EL

Overview
PTFB192503EL PTFB192503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1930 to 1990 MHz frequency band.
Features include input and output matching, high gain, wide signal bandwidth and reduced memory effects for improved DPD correctability.
Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability.
PTFB192503EL Package H-33288-6 PTFB192503FL Package H-34288-4/2 Gain (dB) Drain Efficiency (%) Two-carrier WCDMA 3GPP VDD = 30 V, IDQ = 1.
85 A, ƒ = 19...


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