DatasheetsPDF.com

2N3239

Part Number	2N3239
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 22, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet	2N3239 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for general purpose high power switch and amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A PC Collector Power Dissipation@TC=25℃ 150 W TJ Junction Temperature 175 ℃ Tstg Storage Temperature -65~175 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER R...

Similar Datasheet

2N320 PNP germanium power transistors - Motorola
2N3202 Bipolar PNP Device - Seme LAB
2N3202 PNP Silicon Power Transistor - Solitron Devices
2N3203 PNP Transistor - SSDI
2N3203 PNP Silicon Power Transistor - Solitron Devices
2N3204 PNP Transistor - SSDI
2N3204 PNP Silicon Power Transistor - Solitron Devices
2N3209 Silicon Planar PNP Transistor - STMicroelectronics
2N3209 PNP SILICON TRANSISTOR - Motorola
2N3209 Bipolar PNP Device - Seme LAB

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)