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3AD53

Inchange Semiconductor
Part Number 3AD53
Manufacturer Inchange Semiconductor
Description Silicon PNP Power Transistor
Published Nov 22, 2016
Detailed Description INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE=20-140@IC= -4A ·Collector-E...
Datasheet PDF File 3AD53 PDF File

3AD53
3AD53

Overview
INCHANGE Semiconductor isc Silicon PNP Power Transistors DESCRIPTION ·DC Current Gain- : hFE=20-140@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.
0V(Max)@ IC= -4A · APPLICATIONS ·Designed for general-purpose switching and amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -70 V VCEO Collector-Emitter Voltage -24 V VEBO Emitter-Base Voltage -20 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=55℃ TJ Junction Temperature -6 A 20 W 150 ℃ Tstg Storage Temperature -55-150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.
75 UNIT ℃/...


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