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2N4576

Inchange Semiconductor
Part Number 2N4576
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 20, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·...
Datasheet PDF File 2N4576 PDF File

2N4576
2N4576

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·The device employs the popular JEDEC TO-3 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High voltage high current power transistors ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage 100 V Collector-Emitter Voltage 80 V Emitter-Base Voltage 8 V Collector Current-Continuous 10 A Collector Power Dissipation@TC=25℃ 150 W Junction Temperature 200 ℃ Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAM...


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