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BD791

Inchange Semiconductor
Part Number BD791
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Nov 17, 2016
Detailed Description isc Silicon NPN Power Transistor BD791 DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (M...
Datasheet PDF File BD791 PDF File

BD791
BD791

Overview
isc Silicon NPN Power Transistor BD791 DESCRIPTION ·High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) • High DC Current Gain @ IC = 200 mAdc hFE = 40–250 • Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.
5 Vdc (Max) @ IC = 500 mAdc ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak ...


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