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BD369

Part Number	BD369
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A...
Datasheet	BD369 PDF File

Overview

isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.
0V(Max)@ IC=-10A ·DC Current Gain- : hFE= 20(Min)@IC=-10A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -25 A ICM Collector Current-Peak -50 A IB Base Current-Continuous -7.
5 A PD Total Power Dissipation @TC=25℃ ...

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