DatasheetsPDF.com

BD263

Part Number	BD263
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Curr...
Datasheet	BD263 PDF File

Overview

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.
5 A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.
1 A 36 W 150 ℃ Tstg Storage Temperature...

Similar Datasheet

BD201 Silicon NPN Power Transistor - Inchange Semiconductor
BD201 SILCON EPITAXIAL-BASE POWER TRANSISTORS - Comset Semiconductors
BD201F NPN Transistor - INCHANGE
BD202 Silicon PNP Power Transistor - Inchange Semiconductor
BD202 PNP PLASTIC POWER TRANSISTORS - CDIL
BD202 SILCON EPITAXIAL-BASE POWER TRANSITORS - Comset Semiconductors
BD202F PNP Transistor - INCHANGE
BD203 SILICON POWER TRANSISTOR - SavantIC
BD203 Silicon NPN Power Transistor - Inchange Semiconductor
BD203 SILCON EPITAXIAL-BASE POWER TRANSISTORS - Comset Semiconductors

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)