DatasheetsPDF.com

BD189

Part Number	BD189
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Nov 17, 2016
Detailed Description	isc Silicon NPN Power Transistor BD189 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.5A ·Collector-Emitter Susta...
Datasheet	BD189 PDF File

Overview

isc Silicon NPN Power Transistor BD189 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.
5A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 60V(Min) ·Complement to type BD190 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in 5~10 Watt audio amplifiers utilizing Complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature ...

Similar Datasheet

BD101 RECTIFIER DIODE - Sinyork
BD101W RECTIFIER DIODE - Sinyork
BD101WS RECTIFIER DIODE - Sinyork
BD1020HFV Temperature Sensor - Rohm
BD1040S SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS - Pan Jit International
BD106A (BD1xx) TRANSISTOR - Semelab PLC
BD106B (BD1xx) TRANSISTOR - Semelab PLC
BD107 Silicon NPN Power Transistor - Inchange Semiconductor
BD107A (BD1xx) TRANSISTOR - Semelab PLC
BD107B (BD1xx) TRANSISTOR - Semelab PLC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)